VBT2080C-E3/4W Vishay General Semiconductor
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| Anzahl | Preis ohne MwSt |
|---|---|
| 17+ | 3.07 EUR |
| 21+ | 2.51 EUR |
| 100+ | 2.13 EUR |
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Technische Details VBT2080C-E3/4W Vishay General Semiconductor
Description: DIODE ARR SCHOTT 80V 10A TO263AB, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 10A, Supplier Device Package: TO-263AB (D2PAK), Operating Temperature - Junction: 150°C (Max), Voltage - DC Reverse (Vr) (Max): 80 V, Voltage - Forward (Vf) (Max) @ If: 810 mV @ 10 A, Current - Reverse Leakage @ Vr: 600 µA @ 80 V.
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VBT2080C-E3/4W | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE ARR SCHOTT 80V 10A TO263ABPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 810 mV @ 10 A Current - Reverse Leakage @ Vr: 600 µA @ 80 V |
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