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VEC2616-TL-W-Z

VEC2616-TL-W-Z ON Semiconductor


VEC2616-D-931482.pdf Hersteller: ON Semiconductor
MOSFET PCH+NCH 4V DRIVE SERIES
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Technische Details VEC2616-TL-W-Z ON Semiconductor

Description: MOSFET N/P-CH 60V 3A/2.5A SOT28, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A, Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V, Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, FET Feature: Logic Level Gate, 4V Drive, Vgs(th) (Max) @ Id: 2.6V @ 1mA, Supplier Device Package: SOT-28FL/VEC8, Part Status: Obsolete.

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VEC2616-TL-W-Z VEC2616-TL-W-Z Hersteller : onsemi VEC2616.pdf Description: MOSFET N/P-CH 60V 3A/2.5A SOT28
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: SOT-28FL/VEC8
Part Status: Obsolete
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