VGSOT04C-G3-08 Vishay Semiconductors
auf Bestellung 14435 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.68 EUR |
| 10+ | 0.47 EUR |
| 100+ | 0.24 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.15 EUR |
| 2500+ | 0.12 EUR |
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Technische Details VGSOT04C-G3-08 Vishay Semiconductors
Category: Protection diodes - arrays, Description: Diode: TVS array; 5V; 40A; 0.54kW; unidirectional,common anode, Type of diode: TVS array, Breakdown voltage: 5V, Max. forward impulse current: 40A, Peak pulse power dissipation: 0.54kW, Semiconductor structure: common anode; unidirectional, Mounting: SMD, Case: SOT23-3, Max. off-state voltage: 4V, Leakage current: 20µA, Number of channels: 2, Capacitance: 360pF, Application: general purpose, Operating temperature: -55...150°C.
Weitere Produktangebote VGSOT04C-G3-08 nach Preis ab 0.12 EUR bis 0.12 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| VGSOT04C-G3-08 | Hersteller : VISHAY |
Category: Protection diodes - arrays Description: Diode: TVS array; 5V; 40A; 0.54kW; unidirectional,common anode Type of diode: TVS array Breakdown voltage: 5V Max. forward impulse current: 40A Peak pulse power dissipation: 0.54kW Semiconductor structure: common anode; unidirectional Mounting: SMD Case: SOT23-3 Max. off-state voltage: 4V Leakage current: 20µA Number of channels: 2 Capacitance: 360pF Application: general purpose Operating temperature: -55...150°C |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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