VN0104N3-G-P013 Microchip Technology
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| Anzahl | Preis |
|---|---|
| 2+ | 1.46 EUR |
| 25+ | 1.23 EUR |
| 250+ | 1.11 EUR |
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Technische Details VN0104N3-G-P013 Microchip Technology
Description: MOSFET N-CH 40V 350MA TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 350mA (Tj), Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 1mA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V.
Weitere Produktangebote VN0104N3-G-P013
| Foto | Bezeichnung | Hersteller | Beschreibung |
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VN0104N3-G-P013 | Hersteller : Microchip Technology |
 Trans MOSFET N-CH Si 40V 0.35A 3-Pin TO-92 Ammo |
Produkt ist nicht verfügbar |
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VN0104N3-G-P013 | Hersteller : Microchip Technology |
Description: MOSFET N-CH 40V 350MA TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Tj) Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V |
Produkt ist nicht verfügbar |