VN0106N3-G MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGYCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 350mA; Idm: 2A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.35A
Pulsed drain current: 2A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 528 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 68+ | 1.06 EUR |
| 82+ | 0.87 EUR |
| 97+ | 0.74 EUR |
| 109+ | 0.66 EUR |
| 114+ | 0.63 EUR |
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Technische Details VN0106N3-G MICROCHIP TECHNOLOGY
Description: MOSFET N-CH 60V 350MA TO92-3, Packaging: Bag, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 350mA (Tj), Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 1mA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V.
Weitere Produktangebote VN0106N3-G nach Preis ab 0.63 EUR bis 1.92 EUR
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VN0106N3-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 350mA; Idm: 2A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.35A Pulsed drain current: 2A Power dissipation: 1W Case: TO92 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Kind of package: bulk Kind of channel: enhanced |
auf Bestellung 528 Stücke: Lieferzeit 14-21 Tag (e) |
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VN0106N3-G | Hersteller : Microchip Technology |
MOSFET 60V 3Ohm |
auf Bestellung 16315 Stücke: Lieferzeit 14-28 Tag (e) |
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VN0106N3-G | Hersteller : Microchip Technology |
Description: MOSFET N-CH 60V 350MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Tj) Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V |
auf Bestellung 6836 Stücke: Lieferzeit 21-28 Tag (e) |
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