VN0300L-
Hersteller:
auf Bestellung 353 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details VN0300L-
Description: MOSFET N-CH 60V 200MA TO92-3, Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: TO-92 (TO-226), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 350mW (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads), Packaging: Tape & Box (TB).
Weitere Produktangebote VN0300L-
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| VN0300L | Vishay |
 (N-CH,60V,0.2A,TO-92) Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
VN0300L | onsemi |
Description: MOSFET N-CH 60V 200MA TO92-3 Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: TO-92 (TO-226) Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 350mW (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| VN0300L |
|
Hersteller: Vishay
(N-CH,60V,0.2A,TO-92) Транзистори
(N-CH,60V,0.2A,TO-92) Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VN0300L |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 200MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-92 (TO-226)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 350mW (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Tape & Box (TB)
Description: MOSFET N-CH 60V 200MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-92 (TO-226)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 350mW (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH