VN0300L-G-P002 Microchip Technology
auf Bestellung 1754 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.32 EUR |
| 25+ | 1.94 EUR |
| 100+ | 1.74 EUR |
| 1000+ | 1.53 EUR |
| 4000+ | 1.51 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details VN0300L-G-P002 Microchip Technology
Description: MOSFET N-CH 30V 640MA TO92-3, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 640mA (Tj), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1A, 10V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V.
Weitere Produktangebote VN0300L-G-P002 nach Preis ab 1.82 EUR bis 2.43 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
VN0300L-G-P002 | Hersteller : Microchip Technology |
 Description: MOSFET N-CH 30V 640MA TO92-3Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 640mA (Tj) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1A, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V |
auf Bestellung 1900 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
|
|
VN0300L-G-P002 | Hersteller : Microchip Technology |
Description: MOSFET N-CH 30V 640MA TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 640mA (Tj) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1A, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V |
Produkt ist nicht verfügbar |