VN0300L-G-P002 Microchip Technology
| Anzahl | Preis |
|---|---|
| 2+ | 2.32 EUR |
| 25+ | 1.94 EUR |
| 100+ | 1.74 EUR |
| 1000+ | 1.48 EUR |
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Technische Details VN0300L-G-P002 Microchip Technology
Description: MOSFET N-CH 30V 640MA TO92-3, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 640mA (Tj), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1A, 10V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V.
Weitere Produktangebote VN0300L-G-P002 nach Preis ab 1.82 EUR bis 2.43 EUR
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VN0300L-G-P002 | Microchip Technology |
 Description: MOSFET N-CH 30V 640MA TO92-3Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 640mA (Tj) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1A, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V |
auf Bestellung 1900 Stücke: Lieferzeit 10-14 Tag (e) |
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| VN0300L-G-P002 |
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Hersteller: Microchip Technology
Description: MOSFET N-CH 30V 640MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 640mA (Tj)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V
Description: MOSFET N-CH 30V 640MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 640mA (Tj)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V
auf Bestellung 1900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.43 EUR |
| 25+ | 2.02 EUR |
| 100+ | 1.82 EUR |