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VN0300L-G

VN0300L-G Microchip Technology

VN0300-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005977A.pdf Hersteller: Microchip Technology
Description: MOSFET N-CH 30V 640MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 640mA (Tj)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V
auf Bestellung 2276 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.31 EUR
25+ 1.88 EUR
100+ 1.75 EUR
Mindestbestellmenge: 8
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Technische Details VN0300L-G Microchip Technology

Description: MOSFET N-CH 30V 640MA TO92-3, Packaging: Bag, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 640mA (Tj), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1A, 10V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V.

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VN0300L-G VN0300L-G Hersteller : Microchip Technology supertex_vn0300-1181099.pdf MOSFET 30V 1.2Ohm
auf Bestellung 1032 Stücke:
Lieferzeit 10-14 Tag (e)