VN0606L-G-P003 Microchip Technology
auf Bestellung 1583 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
14+ | 3.9 EUR |
25+ | 3.25 EUR |
100+ | 2.94 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details VN0606L-G-P003 Microchip Technology
Description: MOSFET N-CH 60V 330MA TO92-3, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 330mA (Tj), Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V.
Weitere Produktangebote VN0606L-G-P003
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
VN0606L-G-P003 | Hersteller : Microchip Technology | Trans MOSFET N-CH Si 60V 0.33A 3-Pin TO-92 T/R |
Produkt ist nicht verfügbar |
||
VN0606L-G-P003 | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 330mA; Idm: 1.6A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.33A Pulsed drain current: 1.6A Power dissipation: 1W Case: TO92 Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
VN0606L-G-P003 | Hersteller : Microchip Technology |
Description: MOSFET N-CH 60V 330MA TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 330mA (Tj) Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
Produkt ist nicht verfügbar |
||
VN0606L-G-P003 | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 330mA; Idm: 1.6A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.33A Pulsed drain current: 1.6A Power dissipation: 1W Case: TO92 Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |