VN10KN3-G-P002 Microchip Technology
auf Bestellung 3285 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.20 EUR |
| 25+ | 0.99 EUR |
| 100+ | 0.90 EUR |
| 1000+ | 0.83 EUR |
| 4000+ | 0.82 EUR |
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Technische Details VN10KN3-G-P002 Microchip Technology
Description: MOSFET N-CH 60V 310MA TO92-3, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 310mA (Tj), Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V.
Weitere Produktangebote VN10KN3-G-P002 nach Preis ab 0.91 EUR bis 1.21 EUR
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VN10KN3-G-P002 | Hersteller : Microchip Technology |
 Description: MOSFET N-CH 60V 310MA TO92-3Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310mA (Tj) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V |
auf Bestellung 2596 Stücke: Lieferzeit 10-14 Tag (e) |
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VN10KN3-G-P002 | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 60V 0.31A 3-Pin TO-92 T/R |
Produkt ist nicht verfügbar |
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VN10KN3-G-P002 | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 60V 0.31A 3-Pin TO-92 T/R |
Produkt ist nicht verfügbar |
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VN10KN3-G-P002 | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 60V 0.31A 3-Pin TO-92 T/R |
Produkt ist nicht verfügbar |
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VN10KN3-G-P002 | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 60V 0.31A 3-Pin TO-92 T/R |
Produkt ist nicht verfügbar |
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VN10KN3-G-P002 | Hersteller : Microchip Technology |
Description: MOSFET N-CH 60V 310MA TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310mA (Tj) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V |
Produkt ist nicht verfügbar |
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| VN10KN3-G-P002 | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; Idm: 1A; 1W; TO92 Power dissipation: 1W Polarisation: unipolar Kind of package: tape Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 1A Mounting: THT Case: TO92 Drain-source voltage: 60V Drain current: 0.31A On-state resistance: 5Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |