VN10KN3-G-P002 Microchip Technology
auf Bestellung 458 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 259+ | 0.6 EUR |
| 275+ | 0.55 EUR |
| 278+ | 0.52 EUR |
| 280+ | 0.5 EUR |
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Technische Details VN10KN3-G-P002 Microchip Technology
Description: MOSFET N-CH 60V 310MA TO92-3, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 310mA (Tj), Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V.
Weitere Produktangebote VN10KN3-G-P002 nach Preis ab 0.48 EUR bis 1.38 EUR
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VN10KN3-G-P002 | Hersteller : Microchip Technology |
 Trans MOSFET N-CH Si 60V 0.31A 3-Pin TO-92 T/R |
auf Bestellung 458 Stücke: Lieferzeit 14-21 Tag (e) |
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VN10KN3-G-P002 | Hersteller : Microchip Technology |
Description: MOSFET N-CH 60V 310MA TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310mA (Tj) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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VN10KN3-G-P002 | Hersteller : Microchip Technology |
Description: MOSFET N-CH 60V 310MA TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310mA (Tj) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V |
auf Bestellung 2910 Stücke: Lieferzeit 10-14 Tag (e) |
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VN10KN3-G-P002 | Hersteller : Microchip Technology |
MOSFET N-CH Enhancmnt Mode MOSFET |
auf Bestellung 3726 Stücke: Lieferzeit 14-28 Tag (e) |
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VN10KN3-G-P002 | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 60V 0.31A 3-Pin TO-92 T/R |
Produkt ist nicht verfügbar |
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VN10KN3-G-P002 | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 60V 0.31A 3-Pin TO-92 T/R |
Produkt ist nicht verfügbar |
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VN10KN3-G-P002 | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 60V 0.31A 3-Pin TO-92 T/R |
Produkt ist nicht verfügbar |
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| VN10KN3-G-P002 | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; Idm: 1A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.31A Pulsed drain current: 1A Power dissipation: 1W Case: TO92 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: THT Kind of package: tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| VN10KN3-G-P002 | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; Idm: 1A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.31A Pulsed drain current: 1A Power dissipation: 1W Case: TO92 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: THT Kind of package: tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |