VN1206L-G-P002 Microchip Technology

Description: MOSFET N-CH 120V 230MA TO92-3, Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V, Drain to Source Voltage (Vdss): 120 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Supplier Device Package: TO-92-3, Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 1W (Tc), Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 230mA (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Packaging: Tape & Reel (TR).