VN2110K1-G

VN2110K1-G Microchip Technology


VN2110-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-20005793A.pdf
Hersteller: Microchip Technology
Description: MOSFET N-CH 100V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tj)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 9000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.73 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details VN2110K1-G Microchip Technology

Description: MOSFET N-CH 100V 200MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Tj), Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V, Power Dissipation (Max): 360mW (Tc), Vgs(th) (Max) @ Id: 2.4V @ 1mA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V.

Weitere Produktangebote VN2110K1-G nach Preis ab 0.67 EUR bis 0.95 EUR

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VN2110K1-G VN2110K1-G Hersteller : Microchip Technology VN2110_N_Channel_Enhancement_Mode_Vertical_DMOS_FE-3442181.pdf MOSFETs 100V 4Ohm
auf Bestellung 8037 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.83 EUR
25+0.7 EUR
100+0.67 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
VN2110K1-G VN2110K1-G Hersteller : Microchip Technology VN2110-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-20005793A.pdf Description: MOSFET N-CH 100V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tj)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 11829 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
25+0.81 EUR
100+0.73 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH