auf Bestellung 398 Stücke:
Lieferzeit 311-315 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 26.72 EUR |
| 25+ | 24.5 EUR |
| 100+ | 22.19 EUR |
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Technische Details VN2210N2 Microchip Technology
Description: MOSFET N-CH 100V 1.7A TO39, Packaging: Bag, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.7A (Tj), Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V, Power Dissipation (Max): 360mW (Tc), Vgs(th) (Max) @ Id: 2.4V @ 10mA, Supplier Device Package: TO-39, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V.
Weitere Produktangebote VN2210N2 nach Preis ab 22.77 EUR bis 27.42 EUR
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VN2210N2 | Hersteller : Microchip Technology |
 Description: MOSFET N-CH 100V 1.7A TO39Packaging: Bag Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tj) Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V Power Dissipation (Max): 360mW (Tc) Vgs(th) (Max) @ Id: 2.4V @ 10mA Supplier Device Package: TO-39 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V |
auf Bestellung 137 Stücke: Lieferzeit 10-14 Tag (e) |
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| VN2210N2 | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8A; 360mW; TO39 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Pulsed drain current: 8A Power dissipation: 0.36W Case: TO39 Gate-source voltage: ±20V On-state resistance: 0.35Ω Mounting: THT Kind of package: bulk Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| VN2210N2 | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8A; 360mW; TO39 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Pulsed drain current: 8A Power dissipation: 0.36W Case: TO39 Gate-source voltage: ±20V On-state resistance: 0.35Ω Mounting: THT Kind of package: bulk Kind of channel: enhanced |
Produkt ist nicht verfügbar |