| Anzahl | Privatkunde |
|---|---|
| 1+ | 30.39 EUR |
| 250+ | 27.1 EUR |
| 500+ | 25.24 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details VN2210N2 Microchip Technology
Description: MOSFET N-CH 100V 1.7A TO39, Packaging: Bag, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.7A (Tj), Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V, Power Dissipation (Max): 360mW (Tc), Vgs(th) (Max) @ Id: 2.4V @ 10mA, Supplier Device Package: TO-39, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V.
Weitere Produktangebote VN2210N2 nach Preis ab 19.66 EUR bis 30.51 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
VN2210N2 | Microchip Technology |
 Description: MOSFET N-CH 100V 1.7A TO39Packaging: Bag Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tj) Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V Power Dissipation (Max): 360mW (Tc) Vgs(th) (Max) @ Id: 2.4V @ 10mA Supplier Device Package: TO-39 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V |
auf Bestellung 605 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
| VN2210N2 | Microchip Technology |
Trans MOSFET N-CH Si 100V 1.7A 3-Pin TO-39 Bag |
auf Bestellung 253 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||
| VN2210N2 | Microchip Technology |
Trans MOSFET N-CH Si 100V 1.7A 3-Pin TO-39 Bag |
auf Bestellung 85 Stücke: Lieferzeit 14-21 Tag (e) |
|
| VN2210N2 |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 100V 1.7A TO39
Packaging: Bag
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tj)
Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V
Power Dissipation (Max): 360mW (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 10mA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Description: MOSFET N-CH 100V 1.7A TO39
Packaging: Bag
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tj)
Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V
Power Dissipation (Max): 360mW (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 10mA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
auf Bestellung 605 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 30.51 EUR |
| 25+ | 27.99 EUR |
| 100+ | 25.35 EUR |
| VN2210N2 |
|
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 100V 1.7A 3-Pin TO-39 Bag
Trans MOSFET N-CH Si 100V 1.7A 3-Pin TO-39 Bag
auf Bestellung 253 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 19.8 EUR |
| VN2210N2 |
|
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 100V 1.7A 3-Pin TO-39 Bag
Trans MOSFET N-CH Si 100V 1.7A 3-Pin TO-39 Bag
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 22.43 EUR |
| 25+ | 19.66 EUR |