VN2210N2 Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET N-CH 100V 1.7A TO39
Packaging: Bag
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tj)
Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V
Power Dissipation (Max): 360mW (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 10mA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
auf Bestellung 490 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 26 EUR |
| 25+ | 23.85 EUR |
| 100+ | 21.6 EUR |
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Technische Details VN2210N2 Microchip Technology
Description: MOSFET N-CH 100V 1.7A TO39, Packaging: Bag, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.7A (Tj), Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V, Power Dissipation (Max): 360mW (Tc), Vgs(th) (Max) @ Id: 2.4V @ 10mA, Supplier Device Package: TO-39, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V.
Weitere Produktangebote VN2210N2 nach Preis ab 23.43 EUR bis 28.21 EUR
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VN2210N2 | Hersteller : Microchip Technology |
MOSFETs 100V 0.35Ohm |
auf Bestellung 77 Stücke: Lieferzeit 10-14 Tag (e) |
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