| Anzahl | Privatkunde |
|---|---|
| 1+ | 30.39 EUR |
| 25+ | 27.86 EUR |
| 250+ | 26.01 EUR |
| 500+ | 25.22 EUR |
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Technische Details VN2210N2 Microchip Technology
Description: MOSFET N-CH 100V 1.7A TO39, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: TO-39, Vgs(th) (Max) @ Id: 2.4V @ 10mA, Power Dissipation (Max): 360mW (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.7A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-205AD, TO-39-3 Metal Can, Packaging: Bag.
Weitere Produktangebote VN2210N2 nach Preis ab 19.43 EUR bis 30.51 EUR
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VN2210N2 | Microchip Technology |
 Description: MOSFET N-CH 100V 1.7A TO39Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: TO-39 Vgs(th) (Max) @ Id: 2.4V @ 10mA Power Dissipation (Max): 360mW (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Packaging: Bag |
auf Bestellung 605 Stücke: Lieferzeit 10-14 Tag (e) |
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| VN2210N2 | Microchip Technology |
Trans MOSFET N-CH Si 100V 1.7A 3-Pin TO-39 Bag |
auf Bestellung 253 Stücke: Lieferzeit 14-21 Tag (e) |
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| VN2210N2 | Microchip Technology |
Trans MOSFET N-CH Si 100V 1.7A 3-Pin TO-39 Bag |
auf Bestellung 85 Stücke: Lieferzeit 14-21 Tag (e) |
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| VN2210N2 |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 100V 1.7A TO39
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-39
Vgs(th) (Max) @ Id: 2.4V @ 10mA
Power Dissipation (Max): 360mW (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bag
Description: MOSFET N-CH 100V 1.7A TO39
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-39
Vgs(th) (Max) @ Id: 2.4V @ 10mA
Power Dissipation (Max): 360mW (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bag
auf Bestellung 605 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 30.51 EUR |
| 25+ | 27.99 EUR |
| 100+ | 25.35 EUR |
| VN2210N2 |
|
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 100V 1.7A 3-Pin TO-39 Bag
Trans MOSFET N-CH Si 100V 1.7A 3-Pin TO-39 Bag
auf Bestellung 253 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 19.58 EUR |
| VN2210N2 |
|
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 100V 1.7A 3-Pin TO-39 Bag
Trans MOSFET N-CH Si 100V 1.7A 3-Pin TO-39 Bag
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 22.17 EUR |
| 25+ | 19.43 EUR |