auf Bestellung 986 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.98 EUR |
| 25+ | 3.4 EUR |
| 100+ | 3.1 EUR |
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Technische Details VN2210N3-G Microchip Technology
Description: MOSFET N-CH 100V 1.2A TO92-3, Packaging: Bag, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.2A (Tj), Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V, Power Dissipation (Max): 740mW (Tc), Vgs(th) (Max) @ Id: 2.4V @ 10mA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V.
Weitere Produktangebote VN2210N3-G nach Preis ab 3.07 EUR bis 4.05 EUR
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VN2210N3-G | Hersteller : Microchip Technology |
 Description: MOSFET N-CH 100V 1.2A TO92-3Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Tj) Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V Power Dissipation (Max): 740mW (Tc) Vgs(th) (Max) @ Id: 2.4V @ 10mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V |
auf Bestellung 3826 Stücke: Lieferzeit 10-14 Tag (e) |
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VN2210N3-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8A; 740mW; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Pulsed drain current: 8A Power dissipation: 0.74W Case: TO92 Gate-source voltage: ±20V On-state resistance: 0.35Ω Mounting: THT Kind of package: bulk Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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VN2210N3-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8A; 740mW; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Pulsed drain current: 8A Power dissipation: 0.74W Case: TO92 Gate-source voltage: ±20V On-state resistance: 0.35Ω Mounting: THT Kind of package: bulk Kind of channel: enhanced |
Produkt ist nicht verfügbar |