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Technische Details VN2210N3-G Microchip Technology
Description: MOSFET N-CH 100V 1.2A TO92-3, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: TO-92-3, Vgs(th) (Max) @ Id: 2.4V @ 10mA, Power Dissipation (Max): 740mW (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.2A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Packaging: Bag.
Weitere Produktangebote VN2210N3-G nach Preis ab 3.17 EUR bis 4.17 EUR
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VN2210N3-G | Microchip Technology |
 Description: MOSFET N-CH 100V 1.2A TO92-3Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: TO-92-3 Vgs(th) (Max) @ Id: 2.4V @ 10mA Power Dissipation (Max): 740mW (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 1.2A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bag |
auf Bestellung 3212 Stücke: Lieferzeit 10-14 Tag (e) |
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| VN2210N3-G |
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Hersteller: Microchip Technology
Description: MOSFET N-CH 100V 1.2A TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 2.4V @ 10mA
Power Dissipation (Max): 740mW (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bag
Description: MOSFET N-CH 100V 1.2A TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 2.4V @ 10mA
Power Dissipation (Max): 740mW (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bag
auf Bestellung 3212 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 4.17 EUR |
| 25+ | 3.47 EUR |
| 100+ | 3.17 EUR |