VN2222LL-G-P013 Microchip Technology
auf Bestellung 2641 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 0.97 EUR |
| 25+ | 0.82 EUR |
| 100+ | 0.74 EUR |
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Technische Details VN2222LL-G-P013 Microchip Technology
Description: MOSFET N-CH 60V 230MA TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 230mA (Tj), Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V, Power Dissipation (Max): 400mW (Ta), 1W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-92-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V.
Weitere Produktangebote VN2222LL-G-P013 nach Preis ab 0.74 EUR bis 0.97 EUR
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VN2222LL-G-P013 | Hersteller : Microchip Technology |
 Description: MOSFET N-CH 60V 230MA TO92-3Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Tj) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Power Dissipation (Max): 400mW (Ta), 1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V |
auf Bestellung 1652 Stücke: Lieferzeit 10-14 Tag (e) |
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| VN2222LL-G-P013 | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 60V 0.23A 3-Pin TO-92 Ammo |
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VN2222LL-G-P013 | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 60V 0.23A 3-Pin TO-92 Ammo |
Produkt ist nicht verfügbar |
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VN2222LL-G-P013 | Hersteller : Microchip Technology |
Description: MOSFET N-CH 60V 230MA TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Tj) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Power Dissipation (Max): 400mW (Ta), 1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V |
Produkt ist nicht verfügbar |
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| VN2222LL-G-P013 | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 230mA; Idm: 1A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.23A Pulsed drain current: 1A Power dissipation: 1W Case: TO92 Gate-source voltage: ±30V On-state resistance: 7.5Ω Mounting: THT Kind of package: Ammo Pack Kind of channel: enhancement |
Produkt ist nicht verfügbar |