VN3205N3-G-P002 Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET N-CH 50V 1.2A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Tj)
Rds On (Max) @ Id, Vgs: 300mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 10mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
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Technische Details VN3205N3-G-P002 Microchip Technology
Description: MOSFET N-CH 50V 1.2A TO92-3, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.2A (Tj), Rds On (Max) @ Id, Vgs: 300mOhm @ 3A, 10V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 10mA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V.
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VN3205N3-G-P002 | Hersteller : Microchip Technology |
MOSFETs N-CH Enhancmnt Mode MOSFET |
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