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VN4012L-G Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET N-CH 400V 160MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 100mA, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
auf Bestellung 549 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 3.22 EUR |
| 25+ | 2.67 EUR |
| 100+ | 2.43 EUR |
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Technische Details VN4012L-G Microchip Technology
Description: MOSFET N-CH 400V 160MA TO92-3, Packaging: Bag, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160mA (Tj), Rds On (Max) @ Id, Vgs: 12Ohm @ 100mA, 4.5V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 1.8V @ 1mA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 400 V, Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V.
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