Produktrezensionen
Produktbewertung abgeben
Technische Details VP0106N3-G Microchip Technology
Description: MOSFET P-CH 60V 250MA TO92-3, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Packaging: Bag, Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: TO-92-3, Vgs(th) (Max) @ Id: 3.5V @ 1mA, Power Dissipation (Max): 1W (Tc), Rds On (Max) @ Id, Vgs: 8Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 250mA (Tj), FET Type: P-Channel, Technology: MOSFET (Metal Oxide).
Weitere Produktangebote VP0106N3-G nach Preis ab 1.34 EUR bis 1.78 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
VP0106N3-G | Microchip Technology |
 Description: MOSFET P-CH 60V 250MA TO92-3Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bag Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: TO-92-3 Vgs(th) (Max) @ Id: 3.5V @ 1mA Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 8Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 250mA (Tj) FET Type: P-Channel Technology: MOSFET (Metal Oxide) |
auf Bestellung 105 Stücke: Lieferzeit 10-14 Tag (e) |
|
| VP0106N3-G |
|
Hersteller: Microchip Technology
Description: MOSFET P-CH 60V 250MA TO92-3
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bag
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 250mA (Tj)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET P-CH 60V 250MA TO92-3
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bag
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 250mA (Tj)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 105 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.78 EUR |
| 25+ | 1.49 EUR |
| 100+ | 1.34 EUR |