| Anzahl | Preis |
|---|---|
| 2+ | 1.76 EUR |
| 25+ | 1.48 EUR |
| 100+ | 1.35 EUR |
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Technische Details VP0109N3-G Microchip Technology
Description: MOSFET P-CH 90V 250MA TO92-3, Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V, Drain to Source Voltage (Vdss): 90 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: TO-92-3, Vgs(th) (Max) @ Id: 3.5V @ 1mA, Power Dissipation (Max): 1W (Tc), Rds On (Max) @ Id, Vgs: 8Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 250mA (Tj), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Packaging: Bag.
Weitere Produktangebote VP0109N3-G nach Preis ab 1.35 EUR bis 1.76 EUR
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VP0109N3-G | Hersteller : Microchip Technology |
 Description: MOSFET P-CH 90V 250MA TO92-3Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V Drain to Source Voltage (Vdss): 90 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: TO-92-3 Vgs(th) (Max) @ Id: 3.5V @ 1mA Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 8Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 250mA (Tj) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bag |
auf Bestellung 1063 Stücke: Lieferzeit 10-14 Tag (e) |
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