auf Bestellung 434 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 26.12 EUR |
| 25+ | 23.34 EUR |
| 100+ | 22.12 EUR |
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Technische Details VP2206N2 Microchip Technology
Description: MOSFET P-CH 60V 750MA TO39, Packaging: Bag, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 750mA (Tj), Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V, Power Dissipation (Max): 360mW (Tc), Vgs(th) (Max) @ Id: 3.5V @ 10mA, Supplier Device Package: TO-39, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V.
Weitere Produktangebote VP2206N2 nach Preis ab 22.28 EUR bis 26.84 EUR
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VP2206N2 | Hersteller : Microchip Technology |
 Description: MOSFET P-CH 60V 750MA TO39Packaging: Bag Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 750mA (Tj) Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V Power Dissipation (Max): 360mW (Tc) Vgs(th) (Max) @ Id: 3.5V @ 10mA Supplier Device Package: TO-39 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V |
auf Bestellung 783 Stücke: Lieferzeit 10-14 Tag (e) |
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| VP2206N2 | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -750mA; Idm: -8A; 360mW; TO39 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -750mA Pulsed drain current: -8A Power dissipation: 0.36W Case: TO39 Gate-source voltage: ±20V On-state resistance: 0.9Ω Mounting: THT Kind of package: bulk Kind of channel: enhancement |
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