VP2206N2 Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET P-CH 60V 750MA TO39
Packaging: Bag
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Tj)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Power Dissipation (Max): 360mW (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Supplier Device Package: TO-39
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
auf Bestellung 964 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 31.08 EUR |
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Technische Details VP2206N2 Microchip Technology
Description: MOSFET P-CH 60V 750MA TO39, Packaging: Bag, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 750mA (Tj), Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V, Power Dissipation (Max): 360mW (Tc), Vgs(th) (Max) @ Id: 3.5V @ 10mA, Supplier Device Package: TO-39, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V.
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| VP2206N2 | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -750mA; Idm: -8A; 360mW; TO39 Case: TO39 Kind of package: bulk Mounting: THT Drain-source voltage: -60V Drain current: -750mA On-state resistance: 0.9Ω Type of transistor: P-MOSFET Power dissipation: 0.36W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -8A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| VP2206N2 | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -750mA; Idm: -8A; 360mW; TO39 Case: TO39 Kind of package: bulk Mounting: THT Drain-source voltage: -60V Drain current: -750mA On-state resistance: 0.9Ω Type of transistor: P-MOSFET Power dissipation: 0.36W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -8A |
Produkt ist nicht verfügbar |