VP2206N2

VP2206N2 Microchip Technology


VP2206E082313-3444331.pdf Hersteller: Microchip Technology
MOSFETs 60V 0.9Ohm
auf Bestellung 434 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+27.97 EUR
25+25.64 EUR
100+23.21 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details VP2206N2 Microchip Technology

Description: MOSFET P-CH 60V 750MA TO39, Packaging: Bag, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 750mA (Tj), Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V, Power Dissipation (Max): 360mW (Tc), Vgs(th) (Max) @ Id: 3.5V @ 10mA, Supplier Device Package: TO-39, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V.

Weitere Produktangebote VP2206N2 nach Preis ab 26.31 EUR bis 31.08 EUR

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VP2206N2 VP2206N2 Hersteller : Microchip Technology VP2206%20E082313.pdf Description: MOSFET P-CH 60V 750MA TO39
Packaging: Bag
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Tj)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Power Dissipation (Max): 360mW (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Supplier Device Package: TO-39
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
auf Bestellung 964 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+31.08 EUR
25+28.49 EUR
100+26.31 EUR
Im Einkaufswagen  Stück im Wert von  UAH