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VP2206N3-G-P003

VP2206N3-G-P003 Microchip Technology


VP2206%20E082313.pdf Hersteller: Microchip Technology
Description: MOSFET P-CH 60V 640MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 640mA (Tj)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Power Dissipation (Max): 740mW (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
auf Bestellung 2000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+3.4 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details VP2206N3-G-P003 Microchip Technology

Description: MOSFET P-CH 60V 640MA TO92-3, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 640mA (Tj), Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V, Power Dissipation (Max): 740mW (Tc), Vgs(th) (Max) @ Id: 3.5V @ 10mA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V.

Weitere Produktangebote VP2206N3-G-P003 nach Preis ab 3.4 EUR bis 4.47 EUR

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VP2206N3-G-P003 VP2206N3-G-P003 Hersteller : Microchip Technology VP2206E082313-3444331.pdf MOSFETs P-CH Enhancmnt Mode MOSFET
auf Bestellung 1113 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.47 EUR
25+3.73 EUR
100+3.4 EUR
Im Einkaufswagen  Stück im Wert von  UAH
VP2206N3-G-P003 VP2206N3-G-P003 Hersteller : Microchip Technology VP2206%20E082313.pdf Description: MOSFET P-CH 60V 640MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 640mA (Tj)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Power Dissipation (Max): 740mW (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
auf Bestellung 2228 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.47 EUR
25+3.74 EUR
100+3.4 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
VP2206N3-G-P003 Hersteller : Microchip Technology vp2206e082313.pdf Trans MOSFET P-CH Si 60V 0.64A 3-Pin TO-92 T/R
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