VP2206N3-G-P003 Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET P-CH 60V 640MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 640mA (Tj)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Power Dissipation (Max): 740mW (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
auf Bestellung 1603 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 4.07 EUR |
| 25+ | 3.39 EUR |
| 100+ | 3.09 EUR |
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Technische Details VP2206N3-G-P003 Microchip Technology
Description: MOSFET P-CH 60V 640MA TO92-3, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 640mA (Tj), Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V, Power Dissipation (Max): 740mW (Tc), Vgs(th) (Max) @ Id: 3.5V @ 10mA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V.
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VP2206N3-G-P003 | Hersteller : Microchip Technology |
Description: MOSFET P-CH 60V 640MA TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 640mA (Tj) Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V Power Dissipation (Max): 740mW (Tc) Vgs(th) (Max) @ Id: 3.5V @ 10mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V |
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Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -640mA; Idm: -4A; 740mW; TO92 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -640mA Pulsed drain current: -4A Power dissipation: 0.74W Case: TO92 Gate-source voltage: ±20V On-state resistance: 0.9Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
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