VP2206N3-G-P003 Microchip Technology
Hersteller: Microchip Technology
Description: MOSFET P-CH 60V 640MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Power Dissipation (Max): 740mW (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 640mA (Tj)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Cut Tape (CT)
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Technische Details VP2206N3-G-P003 Microchip Technology
Description: MOSFET P-CH 60V 640MA TO92-3, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: TO-92-3, Vgs(th) (Max) @ Id: 3.5V @ 10mA, Power Dissipation (Max): 740mW (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 640mA (Tj), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote VP2206N3-G-P003
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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VP2206N3-G-P003 | Microchip Technology |
Description: MOSFET P-CH 60V 640MA TO92-3 Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: TO-92-3 Vgs(th) (Max) @ Id: 3.5V @ 10mA Power Dissipation (Max): 740mW (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 640mA (Tj) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
VP2206N3-G-P003 | Microchip Technology |
MOSFETs P-CH Enhancmnt Mode MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| VP2206N3-G-P003 |
|
Hersteller: Microchip Technology
Description: MOSFET P-CH 60V 640MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Power Dissipation (Max): 740mW (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 640mA (Tj)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 60V 640MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Power Dissipation (Max): 740mW (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 640mA (Tj)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| VP2206N3-G-P003 |
|
Hersteller: Microchip Technology
MOSFETs P-CH Enhancmnt Mode MOSFET
MOSFETs P-CH Enhancmnt Mode MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH