VP2206N3-G-P003 Microchip Technology
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.82 EUR |
| 25+ | 4.02 EUR |
| 100+ | 3.67 EUR |
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Technische Details VP2206N3-G-P003 Microchip Technology
Description: MOSFET P-CH 60V 640MA TO92-3, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: TO-92-3, Vgs(th) (Max) @ Id: 3.5V @ 10mA, Power Dissipation (Max): 740mW (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 640mA (Tj), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote VP2206N3-G-P003 nach Preis ab 3.68 EUR bis 4.84 EUR
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VP2206N3-G-P003 | Microchip Technology |
 Description: MOSFET P-CH 60V 640MA TO92-3Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: TO-92-3 Vgs(th) (Max) @ Id: 3.5V @ 10mA Power Dissipation (Max): 740mW (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 640mA (Tj) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Cut Tape (CT) |
auf Bestellung 1603 Stücke: Lieferzeit 10-14 Tag (e) |
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| VP2206N3-G-P003 |
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Hersteller: Microchip Technology
Description: MOSFET P-CH 60V 640MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Power Dissipation (Max): 740mW (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 640mA (Tj)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 60V 640MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Power Dissipation (Max): 740mW (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 640mA (Tj)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Cut Tape (CT)
auf Bestellung 1603 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.84 EUR |
| 25+ | 4.03 EUR |
| 100+ | 3.68 EUR |