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VP3203N8-g

VP3203N8-g Microchip Technology

VP3203%20B082613.pdf Hersteller: Microchip Technology
Description: MOSFET P-CH 30V 1.1A TO243AA
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Tj)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Supplier Device Package: TO-243AA (SOT-89)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
auf Bestellung 1920 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.26 EUR
25+2.70 EUR
100+2.45 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details VP3203N8-g Microchip Technology

Description: MOSFET P-CH 30V 1.1A TO243AA, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.1A (Tj), Rds On (Max) @ Id, Vgs: 600mOhm @ 1.5A, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 3.5V @ 10mA, Supplier Device Package: TO-243AA (SOT-89), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V.

Weitere Produktangebote VP3203N8-g nach Preis ab 2.52 EUR bis 3.34 EUR

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VP3203N8-g VP3203N8-g Hersteller : Microchip Technology VP3203B082613-3444357.pdf MOSFETs 30V 0.6Ohm
auf Bestellung 1308 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.34 EUR
25+2.78 EUR
100+2.52 EUR
Im Einkaufswagen  Stück im Wert von  UAH
VP3203N8-g VP3203N8-g Hersteller : Microchip Technology VP3203%20B082613.pdf Description: MOSFET P-CH 30V 1.1A TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Tj)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Supplier Device Package: TO-243AA (SOT-89)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
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Im Einkaufswagen  Stück im Wert von  UAH