VP3203N8-g

VP3203N8-g Microchip Technology


VP3203%20B082613.pdf Hersteller: Microchip Technology
Description: MOSFET P-CH 30V 1.1A TO243AA
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Tj)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Supplier Device Package: TO-243AA (SOT-89)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
auf Bestellung 1920 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.81 EUR
25+ 3.99 EUR
100+ 3.63 EUR
Mindestbestellmenge: 6
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Technische Details VP3203N8-g Microchip Technology

Description: MOSFET P-CH 30V 1.1A TO243AA, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.1A (Tj), Rds On (Max) @ Id, Vgs: 600mOhm @ 1.5A, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 3.5V @ 10mA, Supplier Device Package: TO-243AA (SOT-89), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V.

Weitere Produktangebote VP3203N8-g nach Preis ab 3.64 EUR bis 4.84 EUR

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VP3203N8-g VP3203N8-g Hersteller : Microchip Technology VP3203_P_Channel_Enhancement_Mode_Vertical_DMOS_FE-2887754.pdf MOSFET 30V 0.6Ohm
auf Bestellung 2705 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
11+4.84 EUR
25+ 4 EUR
100+ 3.64 EUR
Mindestbestellmenge: 11
VP3203N8-g VP3203N8-g Hersteller : MICROCHIP TECHNOLOGY vp3203.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4A; 1.6W; SOT89-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.1A
Pulsed drain current: -4A
Power dissipation: 1.6W
Case: SOT89-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
VP3203N8-g VP3203N8-g Hersteller : Microchip Technology VP3203%20B082613.pdf Description: MOSFET P-CH 30V 1.1A TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Tj)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Supplier Device Package: TO-243AA (SOT-89)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Produkt ist nicht verfügbar
VP3203N8-g VP3203N8-g Hersteller : MICROCHIP TECHNOLOGY vp3203.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4A; 1.6W; SOT89-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.1A
Pulsed drain current: -4A
Power dissipation: 1.6W
Case: SOT89-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar