auf Bestellung 1264 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.17 EUR |
| 25+ | 2.62 EUR |
| 100+ | 2.39 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details VP3203N8-g Microchip Technology
Description: MOSFET P-CH 30V 1.1A TO243AA, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.1A (Tj), Rds On (Max) @ Id, Vgs: 600mOhm @ 1.5A, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 3.5V @ 10mA, Supplier Device Package: TO-243AA (SOT-89), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V.
Weitere Produktangebote VP3203N8-g nach Preis ab 2.45 EUR bis 3.26 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
VP3203N8-G | Hersteller : Microchip Technology |
 Trans MOSFET P-CH Si 30V 1.1A 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
 |
VP3203N8-g | Hersteller : Microchip Technology |
Description: MOSFET P-CH 30V 1.1A TO243AA Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.1A (Tj) Rds On (Max) @ Id, Vgs: 600mOhm @ 1.5A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3.5V @ 10mA Supplier Device Package: TO-243AA (SOT-89) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V |
auf Bestellung 1920 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
|
|
VP3203N8-G | Hersteller : Microchip Technology |
Trans MOSFET P-CH Si 30V 1.1A 4-Pin(3+Tab) SOT-89 T/R |
Produkt ist nicht verfügbar |
|||||||||
|
|
VP3203N8-G | Hersteller : Microchip Technology |
Trans MOSFET P-CH Si 30V 1.1A 4-Pin(3+Tab) SOT-89 T/R |
Produkt ist nicht verfügbar |
|||||||||
|
|
VP3203N8-G | Hersteller : Microchip Technology |
Trans MOSFET P-CH Si 30V 1.1A 4-Pin(3+Tab) SOT-89 T/R |
Produkt ist nicht verfügbar |
|||||||||
|
|
VP3203N8-g | Hersteller : Microchip Technology |
Description: MOSFET P-CH 30V 1.1A TO243AA Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.1A (Tj) Rds On (Max) @ Id, Vgs: 600mOhm @ 1.5A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3.5V @ 10mA Supplier Device Package: TO-243AA (SOT-89) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V |
Produkt ist nicht verfügbar |
|||||||||
 |
VP3203N8-g | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4A; 1.6W; SOT89-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.1A Pulsed drain current: -4A Power dissipation: 1.6W Case: SOT89-3 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |