auf Bestellung 373 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 11.02 EUR |
| 10+ | 8.06 EUR |
| 100+ | 6.53 EUR |
| 375+ | 5.79 EUR |
| 1125+ | 4.96 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details VS-100BGQ030HN4 Vishay
Description: DIODE SCHOTTKY 30V 100A POWERTAB, Packaging: Tube, Package / Case: PowerTab®, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 3800pF @ 5V, 1MHz, Current - Average Rectified (Io): 100A, Supplier Device Package: PowerTab®, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 630 mV @ 100 A, Current - Reverse Leakage @ Vr: 2.4 mA @ 30 V.
Weitere Produktangebote VS-100BGQ030HN4
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
VS-100BGQ030HN4 | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE SCHOTTKY 30V 100A POWERTABPackaging: Tube Package / Case: PowerTab® Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 3800pF @ 5V, 1MHz Current - Average Rectified (Io): 100A Supplier Device Package: PowerTab® Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 100 A Current - Reverse Leakage @ Vr: 2.4 mA @ 30 V |
Produkt ist nicht verfügbar |