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Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 11.23 EUR |
| 10+ | 8.31 EUR |
| 100+ | 6.72 EUR |
| 375+ | 5.95 EUR |
| 1125+ | 5.1 EUR |
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Technische Details VS-100BGQ100HN4 Vishay
Description: DIODE SCHOTTK 100V 100A POWERTAB, Packaging: Tube, Package / Case: PowerTab®, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Current - Average Rectified (Io): 100A, Supplier Device Package: PowerTab®, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 100 A, Current - Reverse Leakage @ Vr: 300 µA @ 100 V, Capacitance @ Vr, F: 1320pF @ 5V, 1MHz.
Weitere Produktangebote VS-100BGQ100HN4
| Foto | Bezeichnung | Hersteller | Beschreibung |
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VS-100BGQ100HN4 | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE SCHOTTK 100V 100A POWERTABPackaging: Tube Package / Case: PowerTab® Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 100A Supplier Device Package: PowerTab® Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 100 A Current - Reverse Leakage @ Vr: 300 µA @ 100 V Capacitance @ Vr, F: 1320pF @ 5V, 1MHz |
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