VS-10ETF10-M3 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 10A TO220AC
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 310 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
| Anzahl | Preis |
|---|---|
| 4+ | 5.39 EUR |
| 10+ | 3.5 EUR |
| 100+ | 2.43 EUR |
| 500+ | 1.97 EUR |
| 1000+ | 1.82 EUR |
| 2000+ | 1.7 EUR |
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Technische Details VS-10ETF10-M3 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 10A TO220AC, Current - Reverse Leakage @ Vr: 100 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Part Status: Active, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: TO-220AC, Current - Average Rectified (Io): 10A, Technology: Standard, Reverse Recovery Time (trr): 310 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.
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VS-10ETF10-M3 | Hersteller : Vishay Semiconductors |
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