VS-10ETF12-M3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 1+ | 3.61 EUR |
| 10+ | 3.31 EUR |
| 25+ | 1.74 EUR |
| 100+ | 1.73 EUR |
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Technische Details VS-10ETF12-M3 Vishay Semiconductors
Description: DIODE STANDARD 1200V 10A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 310 ns, Technology: Standard, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -40°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V.
Weitere Produktangebote VS-10ETF12-M3 nach Preis ab 1.34 EUR bis 4.7 EUR
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VS-10ETF12-M3 | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE STANDARD 1200V 10A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 310 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
auf Bestellung 5061 Stücke: Lieferzeit 10-14 Tag (e) |
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