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VS-1EFH01HM3/I

VS-1EFH01HM3/I Vishay Semiconductors


vs-1efh01hm3.pdf Hersteller: Vishay Semiconductors
Rectifiers 1A 100V Hyprfst Rcfr AEC-Q101 Qualified
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+0.56 EUR
10+0.37 EUR
100+0.26 EUR
500+0.2 EUR
1000+0.15 EUR
5000+0.13 EUR
10000+0.1 EUR
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Technische Details VS-1EFH01HM3/I Vishay Semiconductors

Description: DIODE GEN PURP 100V 1A DO219AB, Packaging: Tape & Reel (TR), Package / Case: DO-219AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 16 ns, Technology: Standard, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-219AB (SMF), Operating Temperature - Junction: -65°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A, Current - Reverse Leakage @ Vr: 2 µA @ 100 V, Qualification: AEC-Q101.

Weitere Produktangebote VS-1EFH01HM3/I nach Preis ab 0.15 EUR bis 0.62 EUR

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VS-1EFH01HM3/I VS-1EFH01HM3/I Hersteller : Vishay General Semiconductor - Diodes Division vs-1efh01hm3.pdf Description: DIODE GEN PURP 100V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 9190 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
43+0.41 EUR
100+0.23 EUR
500+0.2 EUR
1000+0.17 EUR
2000+0.16 EUR
5000+0.15 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
VS-1EFH01HM3/I VS-1EFH01HM3/I Hersteller : Vishay General Semiconductor - Diodes Division vs-1efh01hm3.pdf Description: DIODE GEN PURP 100V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
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VS-1EFH01HM3\I VS-1EFH01HM3\I Hersteller : Vishay Rectifiers Freds - SMF
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VS-1EFH01HM3/I Hersteller : VISHAY vs-1efh01hm3.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 25ns; DO219AB,SMF; Ufmax: 930mV
Max. off-state voltage: 100V
Kind of package: 13 inch reel
Quantity in set/package: 10000pcs.
Application: automotive industry
Case: DO219AB; SMF
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 25ns
Max. forward voltage: 0.93V
Load current: 1A
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