| Anzahl | Preis |
|---|---|
| 1+ | 19.69 EUR |
| 10+ | 16.9 EUR |
| 100+ | 14.06 EUR |
| 200+ | 11.21 EUR |
| 500+ | 11.11 EUR |
| 1000+ | 10.88 EUR |
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Technische Details VS-1N2129A Vishay Semiconductors
Description: DIODE GEN PURP 100V 60A DO203AB, Package / Case: DO-203AB, DO-5, Stud, Packaging: Bulk, Current - Reverse Leakage @ Vr: 10 mA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 188 A, Voltage - DC Reverse (Vr) (Max): 100 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 200°C, Supplier Device Package: DO-203AB (DO-5), Current - Average Rectified (Io): 60A, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Chassis, Stud Mount.
Weitere Produktangebote VS-1N2129A
| Foto | Bezeichnung | Hersteller | Beschreibung |
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VS-1N2129A | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 100V 60A DO203ABPackage / Case: DO-203AB, DO-5, Stud Packaging: Bulk Current - Reverse Leakage @ Vr: 10 mA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 188 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -65°C ~ 200°C Supplier Device Package: DO-203AB (DO-5) Current - Average Rectified (Io): 60A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Chassis, Stud Mount |
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