VS-1N3671RA Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 800V 12A DO203AA, Current - Reverse Leakage @ Vr: 800 µA @ 800 V, Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A, Voltage - DC Reverse (Vr) (Max): 800 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 200°C, Supplier Device Package: DO-203AA (DO-4), Current - Average Rectified (Io): 12A, Technology: Standard, Reverse Polarity, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Chassis, Stud Mount, Package / Case: DO-203AA, DO-4, Stud, Packaging: Bulk.