
VS-1N3766R Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 800V 35A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 110 A
Current - Reverse Leakage @ Vr: 4 mA @ 800 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 18.13 EUR |
10+ | 15.98 EUR |
100+ | 13.82 EUR |
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Technische Details VS-1N3766R Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 35A DO203AB, Packaging: Bulk, Package / Case: DO-203AB, DO-5, Stud, Mounting Type: Chassis, Stud Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Reverse Polarity, Current - Average Rectified (Io): 35A, Supplier Device Package: DO-203AB (DO-5), Operating Temperature - Junction: -65°C ~ 190°C, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 110 A, Current - Reverse Leakage @ Vr: 4 mA @ 800 V.
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VS-1N3766R | Hersteller : Vishay Semiconductors |
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