VS-20CWT10FN Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 10A DPAK
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-252AA (DPAK)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
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Technische Details VS-20CWT10FN Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 10A DPAK, Current - Reverse Leakage @ Vr: 50 µA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A, Voltage - DC Reverse (Vr) (Max): 100 V, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: TO-252AA (DPAK), Current - Average Rectified (Io) (per Diode): 10A, Diode Configuration: 1 Pair Common Cathode, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tube.