VS-20ETS12STRL-M3 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 8800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
800+ | 1.93 EUR |
5600+ | 1.87 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details VS-20ETS12STRL-M3 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-263AB (D2PAK), Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V.
Weitere Produktangebote VS-20ETS12STRL-M3 nach Preis ab 2.78 EUR bis 5.12 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
VS-20ETS12STRL-M3 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 20A TO263AB Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
auf Bestellung 9490 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
VS-20ETS12STRL-M3 | Hersteller : Vishay Semiconductors | Rectifiers New Input Diodes - D2PAK-e3 |
auf Bestellung 5547 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||
VS-20ETS12STRL-M3 | Hersteller : Vishay | Rectifier Diode Switching 1.2KV 20A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
||||||||||||||
VS-20ETS12STRL-M3 | Hersteller : Vishay | Rectifier Diode Switching 1.2KV 20A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
||||||||||||||
VS-20ETS12STRL-M3 | Hersteller : Vishay | Rectifier Diode Switching 1.2KV 20A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
||||||||||||||
VS-20ETS12STRL-M3 | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 20A; D2PAK; Ufmax: 1.1V; Ifsm: 300A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 300A Max. forward voltage: 1.1V Leakage current: 1mA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
VS-20ETS12STRL-M3 | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 20A; D2PAK; Ufmax: 1.1V; Ifsm: 300A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 300A Max. forward voltage: 1.1V Leakage current: 1mA |
Produkt ist nicht verfügbar |