VS-25ETS10S-M3 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE GEN PURP 1KV 25A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details VS-25ETS10S-M3 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 25A TO263AB, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 25A, Supplier Device Package: TO-263AB (D2PAK), Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 25 A, Current - Reverse Leakage @ Vr: 100 µA @ 1000 V.
Weitere Produktangebote VS-25ETS10S-M3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
VS-25ETS10S-M3 | Hersteller : Vishay Semiconductors |
Rectifiers New Input Diodes - D2PAK-e3 |
Produkt ist nicht verfügbar |