VS-2EGH02-M3/5BT Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 4+ | 0.82 EUR |
| 10+ | 0.65 EUR |
| 100+ | 0.39 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.25 EUR |
| 2500+ | 0.23 EUR |
| 10000+ | 0.18 EUR |
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Technische Details VS-2EGH02-M3/5BT Vishay Semiconductors
Description: DIODE GEN PURP 200V 2A DO214AA, Current - Reverse Leakage @ Vr: 2 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A, Voltage - DC Reverse (Vr) (Max): 200 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: DO-214AA (SMBJ), Current - Average Rectified (Io): 2A, Technology: Standard, Reverse Recovery Time (trr): 23 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AA, SMB, Packaging: Tape & Reel (TR).
Weitere Produktangebote VS-2EGH02-M3/5BT
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
;;2.jpg "VS-2EGH02-M3/5BT") |
VS-2EGH02-M3/5BT | Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 200V 2A DO214AACurrent - Reverse Leakage @ Vr: 2 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-214AA (SMBJ) Current - Average Rectified (Io): 2A Technology: Standard Reverse Recovery Time (trr): 23 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3200 Stücke Im Einkaufswagen Stück im Wert von UAH |
| VS-2EGH02-M3/5BT |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO214AA
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA (SMBJ)
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 23 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 200V 2A DO214AA
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA (SMBJ)
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 23 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3200 Stücke
Im Einkaufswagen
Stück im Wert von UAH