VS-2EGH02HM3/5BT Vishay Semiconductors
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Technische Details VS-2EGH02HM3/5BT Vishay Semiconductors
Description: DIODE GEN PURP 200V 2A DO214AA, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 21 ns, Technology: Standard, Current - Average Rectified (Io): 2A, Supplier Device Package: DO-214AA (SMB), Operating Temperature - Junction: -65°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A, Current - Reverse Leakage @ Vr: 2 µA @ 200 V, Qualification: AEC-Q101.
Weitere Produktangebote VS-2EGH02HM3/5BT
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VS-2EGH02HM3/5BT | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 200V 2A DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 21 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 200 V Qualification: AEC-Q101 |
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