VS-2EGH02HM3/5BT Vishay Semiconductors

Description: DIODE GEN PURP 200V 2A DO214AA, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A, Voltage - DC Reverse (Vr) (Max): 200 V, Grade: Automotive, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: DO-214AA (SMB), Current - Average Rectified (Io): 2A, Technology: Standard, Reverse Recovery Time (trr): 21 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AA, SMB, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 2 µA @ 200 V.