Technische Details VS-2EGH02HM3/5BT Vishay Semiconductors
Description: DIODE GEN PURP 200V 2A DO214AA, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A, Voltage - DC Reverse (Vr) (Max): 200 V, Grade: Automotive, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: DO-214AA (SMB), Current - Average Rectified (Io): 2A, Technology: Standard, Reverse Recovery Time (trr): 21 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AA, SMB, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 2 µA @ 200 V.
Weitere Produktangebote VS-2EGH02HM3/5BT
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VS-2EGH02HM3/5BT | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 200V 2A DO214AAVoltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 200 V Grade: Automotive Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 2A Technology: Standard Reverse Recovery Time (trr): 21 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 2 µA @ 200 V |
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