VS-2EMH02-M3/5AT Vishay Semiconductors
auf Bestellung 4995 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.74 EUR |
| 10+ | 0.51 EUR |
| 100+ | 0.26 EUR |
| 1000+ | 0.18 EUR |
| 2500+ | 0.16 EUR |
| 7500+ | 0.15 EUR |
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Technische Details VS-2EMH02-M3/5AT Vishay Semiconductors
Description: DIODE GEN PURP 200V 2A DO214AC, Packaging: Tape & Reel (TR), Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Current - Average Rectified (Io): 2A, Supplier Device Package: DO-214AC (SMA), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A, Current - Reverse Leakage @ Vr: 2 µA @ 200 V.
Weitere Produktangebote VS-2EMH02-M3/5AT
| Foto | Bezeichnung | Hersteller | Beschreibung |
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VS-2EMH02-M3/5AT | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 200V 2A DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 200 V |
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