VS-30ETU12THN3 Vishay Semiconductors
auf Bestellung 381 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.92 EUR |
| 10+ | 3.27 EUR |
| 100+ | 2.60 EUR |
| 500+ | 2.20 EUR |
| 1000+ | 1.88 EUR |
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Technische Details VS-30ETU12THN3 Vishay Semiconductors
Description: DIODE GEN PURP 30A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 220 ns, Technology: Standard, Current - Average Rectified (Io): 30A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - Forward (Vf) (Max) @ If: 2.68 V @ 30 A, Current - Reverse Leakage @ Vr: 145 µA @ 1200 V, Qualification: AEC-Q101.
Weitere Produktangebote VS-30ETU12THN3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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VS-30ETU12THN3 | Hersteller : Vishay |
 Diode Switching 1.2KV 30A Automotive AEC-Q101 2-Pin(2+Tab) TO-220AC Tube |
Produkt ist nicht verfügbar |
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VS-30ETU12THN3 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 30A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 220 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - Forward (Vf) (Max) @ If: 2.68 V @ 30 A Current - Reverse Leakage @ Vr: 145 µA @ 1200 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |