VS-3C04EV07T-M3/I Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE SIL CARB 650V 4A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 175pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
auf Bestellung 4120 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.48 EUR |
| 10+ | 2.49 EUR |
| 100+ | 1.88 EUR |
| 500+ | 1.57 EUR |
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Technische Details VS-3C04EV07T-M3/I Vishay General Semiconductor - Diodes Division
Description: DIODE SIL CARB 650V 4A SLIMDPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 175pF @ 1V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: SlimDPAK, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A, Current - Reverse Leakage @ Vr: 25 µA @ 650 V.
Weitere Produktangebote VS-3C04EV07T-M3/I nach Preis ab 1.44 EUR bis 3.73 EUR
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VS-3C04EV07T-M3/I | Hersteller : Vishay Semiconductors |
SiC Schottky Diodes SIC-G3-SLIMDPAK 2L |
auf Bestellung 12014 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-3C04EV07T-M3/I | Hersteller : VISHAY |
Description: VISHAY - VS-3C04EV07T-M3/I - SiC-Schottky-Diode, eSMP Series, Einfach, 650 V, 4 A, 12 nC, SlimDPAK tariffCode: 85411000 Bauform - Diode: SlimDPAK Kapazitive Gesamtladung: 12nC Diodenmontage: Oberflächenmontage hazardous: false Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 4A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 2 Pins Produktpalette: eSMP Series productTraceability: No Betriebstemperatur, max.: 175°C SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 39 Stücke: Lieferzeit 14-21 Tag (e) |
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VS-3C04EV07T-M3/I | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE SIL CARB 650V 4A SLIMDPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 175pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: SlimDPAK Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A Current - Reverse Leakage @ Vr: 25 µA @ 650 V |
Produkt ist nicht verfügbar |
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| VS-3C04EV07T-M3/I | Hersteller : VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SlimDPAK; SiC; SMD; 650V; 4A; reel,tape Semiconductor structure: single diode Max. forward impulse current: 29A Leakage current: 0.2µA Mounting: SMD Load current: 4A Max. forward voltage: 1.5V Max. off-state voltage: 650V Kind of package: reel; tape Type of diode: Schottky rectifying Case: SlimDPAK Technology: eSMP®; SiC |
Produkt ist nicht verfügbar |