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VS-3C05ET12S2L-M3

VS-3C05ET12S2L-M3 Vishay

vs-3c05et12s2l-m3.pdf Hersteller: Vishay
SiC Schottky Diodes SILICON CARBIDE DIODE - D2-PAK
auf Bestellung 1318 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.97 EUR
10+3.92 EUR
100+2.76 EUR
500+2.69 EUR
800+2.57 EUR
2400+2.24 EUR
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Technische Details VS-3C05ET12S2L-M3 Vishay

Description: DIODE SIL CARB 1200V 5A TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Diode Type: Schottky - Single, Operating Temperature: -55°C ~ 175°C (TJ), Capacitance @ Vr, F: 20pF @ 800V, 1MHz, Voltage - Peak Reverse (Max): 1200V, Supplier Device Package: TO-263AB (D2PAK), Current - Max: 5 A, Power Dissipation (Max): 60 W, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Technology: SiC (Silicon Carbide) Schottky, Current - Average Rectified (Io): 5A, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A, Current - Reverse Leakage @ Vr: 30 µA @ 1200 V.

Weitere Produktangebote VS-3C05ET12S2L-M3 nach Preis ab 3.4 EUR bis 8.04 EUR

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VS-3C05ET12S2L-M3 VS-3C05ET12S2L-M3 Hersteller : Vishay General Semiconductor - Diodes Division vs-3c05et12s2l-m3.pdf Description: DIODE SIL CARB 1200V 5A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Diode Type: Schottky - Single
Speed: No Recovery Time > 500mA (Io)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 20pF @ 800V, 1MHz
Voltage - Peak Reverse (Max): 1200V
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Max: 5 A
Power Dissipation (Max): 60 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
auf Bestellung 796 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.04 EUR
10+5.32 EUR
100+3.78 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
VS-3C05ET12S2L-M3 Hersteller : VISHAY vs-3c05et12s2l-m3.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SiC; SMD; 1.2kV; 5A
Mounting: SMD
Capacitance: 20pF
Leakage current: 30µA
Reverse recovery time: 28ns
Case: D2PAK; TO263AB
Max. forward voltage: 1.5V
Load current: 5A
Max. load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 42A
Max. off-state voltage: 1.2kV
Power dissipation: 60W
Type of diode: Schottky rectifying
Technology: SiC
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+3.4 EUR
Mindestbestellmenge: 800
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VS-3C05ET12S2L-M3 VS-3C05ET12S2L-M3 Hersteller : Vishay General Semiconductor - Diodes Division vs-3c05et12s2l-m3.pdf Description: DIODE SIL CARB 1200V 5A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Vr, F: 20pF @ 800V, 1MHz
Voltage - Peak Reverse (Max): 1200V
Supplier Device Package: TO-263AB (D2PAK)
Current - Max: 5 A
Power Dissipation (Max): 60 W
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 5A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
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