auf Bestellung 1384 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.42 EUR |
| 10+ | 4.65 EUR |
| 100+ | 3.41 EUR |
| 800+ | 3.15 EUR |
| 2400+ | 2.97 EUR |
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Technische Details VS-3C05ET12S2L-M3 Vishay
Description: DIODE SIL CARB 1200V 5A TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Diode Type: Schottky - Single, Speed: No Recovery Time > 500mA (Io), Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 20pF @ 800V, 1MHz, Voltage - Peak Reverse (Max): 1200V, Current - Average Rectified (Io): 5A, Supplier Device Package: TO-263AB (D2PAK), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Current - Max: 5 A, Power Dissipation (Max): 60 W, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A, Current - Reverse Leakage @ Vr: 30 µA @ 1200 V.
Weitere Produktangebote VS-3C05ET12S2L-M3 nach Preis ab 3.78 EUR bis 8.04 EUR
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VS-3C05ET12S2L-M3 | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE SIL CARB 1200V 5A TO263ABPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Diode Type: Schottky - Single Speed: No Recovery Time > 500mA (Io) Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 20pF @ 800V, 1MHz Voltage - Peak Reverse (Max): 1200V Current - Average Rectified (Io): 5A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Current - Max: 5 A Power Dissipation (Max): 60 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Current - Reverse Leakage @ Vr: 30 µA @ 1200 V |
auf Bestellung 796 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-3C05ET12S2L-M3 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE SIL CARB 1200V 5A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Diode Type: Schottky - Single Speed: No Recovery Time > 500mA (Io) Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 20pF @ 800V, 1MHz Voltage - Peak Reverse (Max): 1200V Current - Average Rectified (Io): 5A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Current - Max: 5 A Power Dissipation (Max): 60 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Current - Reverse Leakage @ Vr: 30 µA @ 1200 V |
Produkt ist nicht verfügbar |