VS-3C10ET07T-M3 Vishay Semiconductors
auf Bestellung 1409 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.60 EUR |
| 10+ | 6.39 EUR |
| 100+ | 5.16 EUR |
| 250+ | 4.86 EUR |
| 500+ | 4.58 EUR |
| 1000+ | 3.92 EUR |
| 3000+ | 3.68 EUR |
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Technische Details VS-3C10ET07T-M3 Vishay Semiconductors
Description: 650 V POWER SIC GEN 3 MERGED PIN, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 445pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A, Current - Reverse Leakage @ Vr: 55 µA @ 650 V.
Weitere Produktangebote VS-3C10ET07T-M3 nach Preis ab 4.58 EUR bis 8.34 EUR
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VS-3C10ET07T-M3 | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: 650 V POWER SIC GEN 3 MERGED PINPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 445pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 55 µA @ 650 V |
auf Bestellung 3047 Stücke: Lieferzeit 10-14 Tag (e) |
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