VS-3C10EV07T-M3/I Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE SIL CARB 650V 10A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 445pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
auf Bestellung 4392 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.04 EUR |
| 10+ | 4.61 EUR |
| 100+ | 3.50 EUR |
| 500+ | 3.16 EUR |
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Technische Details VS-3C10EV07T-M3/I Vishay General Semiconductor - Diodes Division
Description: DIODE SIL CARB 650V 10A SLIMDPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 445pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: SlimDPAK, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A, Current - Reverse Leakage @ Vr: 55 µA @ 650 V.
Weitere Produktangebote VS-3C10EV07T-M3/I nach Preis ab 2.87 EUR bis 6.46 EUR
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VS-3C10EV07T-M3/I | Hersteller : Vishay Semiconductors |
SiC Schottky Diodes SIC-G3-SLIMDPAK 2L |
auf Bestellung 8434 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-3C10EV07T-M3/I | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE SIL CARB 650V 10A SLIMDPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 445pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: SlimDPAK Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 55 µA @ 650 V |
Produkt ist nicht verfügbar |
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| VS-3C10EV07T-M3/I | Hersteller : VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SlimDPAK; SiC; SMD; 650V; 10A Semiconductor structure: single diode Max. forward impulse current: 60A Leakage current: 0.7µA Mounting: SMD Load current: 10A Max. forward voltage: 1.5V Max. off-state voltage: 650V Kind of package: reel; tape Type of diode: Schottky rectifying Case: SlimDPAK Technology: eSMP®; SiC |
Produkt ist nicht verfügbar |