VS-3C15ET12S2L-M3 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: 15A 1200V SIC ZERO QRR SINGLE TJ
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Diode Type: Schottky - Single
Speed: No Recovery Time > 500mA (Io)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 56pF @ 800V, 1MHz
Voltage - Peak Reverse (Max): 1200V
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Max: 15 A
Power Dissipation (Max): 111 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 5.94 EUR |
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Technische Details VS-3C15ET12S2L-M3 Vishay General Semiconductor - Diodes Division
Description: 15A 1200V SIC ZERO QRR SINGLE TJ, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Diode Type: Schottky - Single, Speed: No Recovery Time > 500mA (Io), Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 56pF @ 800V, 1MHz, Voltage - Peak Reverse (Max): 1200V, Current - Average Rectified (Io): 15A, Supplier Device Package: TO-263AB (D2PAK), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Current - Max: 15 A, Power Dissipation (Max): 111 W, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A, Current - Reverse Leakage @ Vr: 75 µA @ 1200 V.
Weitere Produktangebote VS-3C15ET12S2L-M3 nach Preis ab 6.18 EUR bis 11.76 EUR
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VS-3C15ET12S2L-M3 | Hersteller : Vishay |
SiC Schottky Diodes SILICON CARBIDE DIODE - D2-PAK |
auf Bestellung 1522 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-3C15ET12S2L-M3 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: 15A 1200V SIC ZERO QRR SINGLE TJ Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Diode Type: Schottky - Single Speed: No Recovery Time > 500mA (Io) Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 56pF @ 800V, 1MHz Voltage - Peak Reverse (Max): 1200V Current - Average Rectified (Io): 15A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Current - Max: 15 A Power Dissipation (Max): 111 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A Current - Reverse Leakage @ Vr: 75 µA @ 1200 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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