VS-3C16ET07T-M3 VISHAY
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 104A
Kind of package: tube
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Technische Details VS-3C16ET07T-M3 VISHAY
Description: 650 V POWER SIC GEN 3 MERGED PIN, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 700pF @ 1V, 1MHz, Current - Average Rectified (Io): 16A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A, Current - Reverse Leakage @ Vr: 85 µA @ 650 V.
Weitere Produktangebote VS-3C16ET07T-M3 nach Preis ab 5.71 EUR bis 14.89 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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VS-3C16ET07T-M3 | Vishay Semiconductors |
SiC Schottky Diodes RECT 650V 16A RDL POWER SIC |
auf Bestellung 1212 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-3C16ET07T-M3 | Vishay General Semiconductor - Diodes Division |
Description: 650 V POWER SIC GEN 3 MERGED PIN Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 700pF @ 1V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A Current - Reverse Leakage @ Vr: 85 µA @ 650 V |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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| VS-3C16ET07T-M3 |
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Hersteller: Vishay Semiconductors
SiC Schottky Diodes RECT 650V 16A RDL POWER SIC
SiC Schottky Diodes RECT 650V 16A RDL POWER SIC
auf Bestellung 1212 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.42 EUR |
| 10+ | 7.47 EUR |
| 2500+ | 5.71 EUR |
| VS-3C16ET07T-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 700pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 85 µA @ 650 V
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 700pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 85 µA @ 650 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 14.89 EUR |
| 10+ | 13.46 EUR |
| 100+ | 11.14 EUR |
| 500+ | 9.7 EUR |
| 1000+ | 9.12 EUR |