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VS-3C20ET07S2L-M3

VS-3C20ET07S2L-M3 Vishay Semiconductors


vs-3c20et07s2l-m3.pdf Hersteller: Vishay Semiconductors
SiC Schottky Diodes SILICON CARBIDE DIODE - D2-PAK
auf Bestellung 1420 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+15.26 EUR
10+13.06 EUR
100+10.88 EUR
250+10.44 EUR
500+9.61 EUR
800+8.98 EUR
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Technische Details VS-3C20ET07S2L-M3 Vishay Semiconductors

Description: 650 V POWER SIC GEN 3 MERGED PIN, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 845pF @ 1V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-263AB (D²PAK), Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A, Current - Reverse Leakage @ Vr: 100 µA @ 650 V.

Weitere Produktangebote VS-3C20ET07S2L-M3 nach Preis ab 12.50 EUR bis 16.70 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
VS-3C20ET07S2L-M3 VS-3C20ET07S2L-M3 Hersteller : Vishay General Semiconductor - Diodes Division vs-3c20et07s2l-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 845pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 663 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.70 EUR
10+15.10 EUR
100+12.50 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
VS-3C20ET07S2L-M3 VS-3C20ET07S2L-M3 Hersteller : Vishay General Semiconductor - Diodes Division vs-3c20et07s2l-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 845pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
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Im Einkaufswagen  Stück im Wert von  UAH