VS-3ECH01-M3/9AT Vishay Semiconductors
auf Bestellung 2300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.88 EUR |
| 10+ | 0.76 EUR |
| 100+ | 0.53 EUR |
| 500+ | 0.41 EUR |
| 1000+ | 0.34 EUR |
| 2500+ | 0.33 EUR |
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Technische Details VS-3ECH01-M3/9AT Vishay Semiconductors
Description: DIODE GEN PURP 100V 3A DO214AB, Packaging: Tape & Reel (TR), Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-214AB (SMC), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A, Current - Reverse Leakage @ Vr: 2 µA @ 100 V.
Weitere Produktangebote VS-3ECH01-M3/9AT
| Foto | Bezeichnung | Hersteller | Beschreibung |
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VS-3ECH01-M3/9AT | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 100V 3A DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V |
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