VS-43CTQ080G-1PBF Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 80V 20A TO262-3
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Current - Reverse Leakage @ Vr: 360 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 20 A
Qualification: AEC-Q101
Voltage - DC Reverse (Vr) (Max): 80 V
Grade: Automotive
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-262-3
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
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Technische Details VS-43CTQ080G-1PBF Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 80V 20A TO262-3, Current - Average Rectified (Io) (per Diode): 20A, Diode Configuration: 1 Pair Common Cathode, Current - Reverse Leakage @ Vr: 360 µA @ 80 V, Voltage - Forward (Vf) (Max) @ If: 810 mV @ 20 A, Qualification: AEC-Q101, Voltage - DC Reverse (Vr) (Max): 80 V, Grade: Automotive, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: TO-262-3, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Packaging: Tube.