VS-4ESH01-M3/86A Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.58 EUR |
| 3000+ | 0.54 EUR |
| 4500+ | 0.51 EUR |
| 7500+ | 0.48 EUR |
| 10500+ | 0.46 EUR |
| 15000+ | 0.45 EUR |
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Technische Details VS-4ESH01-M3/86A Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 4A TO277A, Packaging: Tape & Reel (TR), Package / Case: TO-277, 3-PowerDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 20 ns, Technology: Standard, Current - Average Rectified (Io): 4A, Supplier Device Package: TO-277A (SMPC), Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A, Current - Reverse Leakage @ Vr: 2 µA @ 100 V.
Weitere Produktangebote VS-4ESH01-M3/86A nach Preis ab 0.49 EUR bis 2.32 EUR
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VS-4ESH01-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 100V 4A TO277A Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V |
auf Bestellung 29168 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-4ESH01-M3/86A | Vishay Semiconductors |
Rectifiers Hypfst Rct 4A 100V |
auf Bestellung 2033 Stücke: Lieferzeit 10-14 Tag (e) |
|
| VS-4ESH01-M3/86A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Description: DIODE STANDARD 100V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
auf Bestellung 29168 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.14 EUR |
| 16+ | 1.33 EUR |
| 100+ | 0.87 EUR |
| 500+ | 0.68 EUR |
| VS-4ESH01-M3/86A |
|
Hersteller: Vishay Semiconductors
Rectifiers Hypfst Rct 4A 100V
Rectifiers Hypfst Rct 4A 100V
auf Bestellung 2033 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.32 EUR |
| 10+ | 1.34 EUR |
| 100+ | 0.88 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.58 EUR |
| 1500+ | 0.54 EUR |
| 3000+ | 0.49 EUR |