VS-8EWF02S-M3 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE STANDARD 200V 8A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.77 EUR |
| 75+ | 2.38 EUR |
| 525+ | 2.31 EUR |
| 2025+ | 2.27 EUR |
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Technische Details VS-8EWF02S-M3 Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 8A TO252AA, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 55 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-252AA (DPAK), Operating Temperature - Junction: -40°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A, Current - Reverse Leakage @ Vr: 100 µA @ 200 V.
Weitere Produktangebote VS-8EWF02S-M3 nach Preis ab 2.66 EUR bis 5.81 EUR
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VS-8EWF02S-M3 | Hersteller : Vishay Semiconductors |
Small Signal Switching Diodes New Input Diodes - D-PAK-e3 |
auf Bestellung 4901 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-8EWF02S-M3 | Hersteller : Vishay |
Rectifier Diode Switching Si 200V 8A 200ns 3-Pin(2+Tab) DPAK Tube |
Produkt ist nicht verfügbar |
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| VS-8EWF02S-M3 | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 8A; 200ns; DPAK; Ufmax: 1.2V; Ifsm: 150A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 8A Reverse recovery time: 200ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Case: DPAK Max. forward voltage: 1.2V Kind of package: tube Quantity in set/package: 75pcs. Leakage current: 3mA Max. forward impulse current: 150A |
Produkt ist nicht verfügbar |