VS-8EWF10S-M3 Vishay Semiconductors
auf Bestellung 1173 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.05 EUR |
| 10+ | 2.41 EUR |
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Technische Details VS-8EWF10S-M3 Vishay Semiconductors
Description: DIODE STANDARD 1000V 8A TO252AA, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 270 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-252AA (DPAK), Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A, Current - Reverse Leakage @ Vr: 100 µA @ 1000 V.
Weitere Produktangebote VS-8EWF10S-M3 nach Preis ab 2.48 EUR bis 4.19 EUR
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VS-8EWF10S-M3 | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE STANDARD 1000V 8A TO252AAPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 270 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Current - Reverse Leakage @ Vr: 100 µA @ 1000 V |
auf Bestellung 2629 Stücke: Lieferzeit 10-14 Tag (e) |
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