
VS-8EWF10S-M3 Vishay General Semiconductor - Diodes Division

Description: DIODE STANDARD 1000V 8A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 270 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
auf Bestellung 2629 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
5+ | 4.19 EUR |
75+ | 2.57 EUR |
150+ | 2.48 EUR |
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Technische Details VS-8EWF10S-M3 Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 8A TO252AA, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 270 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-252AA (DPAK), Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A, Current - Reverse Leakage @ Vr: 100 µA @ 1000 V.
Weitere Produktangebote VS-8EWF10S-M3 nach Preis ab 2.78 EUR bis 4.26 EUR
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VS-8EWF10S-M3 | Hersteller : Vishay Semiconductors |
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auf Bestellung 1651 Stücke: Lieferzeit 10-14 Tag (e) |
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