VS-8EWH02FNTR-M3 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE GEN PURP 200V 8A D-PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 0.58 EUR |
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Technische Details VS-8EWH02FNTR-M3 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A D-PAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 24 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-252AA (DPAK), Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 970 mV @ 8 A, Current - Reverse Leakage @ Vr: 5 µA @ 200 V.
Weitere Produktangebote VS-8EWH02FNTR-M3 nach Preis ab 0.65 EUR bis 2.27 EUR
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VS-8EWH02FNTR-M3 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 8A D-PAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 24 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 970 mV @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
auf Bestellung 4269 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-8EWH02FNTR-M3 | Hersteller : Vishay Semiconductors |
Rectifiers Hyperfast 8A 200V 23ns |
auf Bestellung 3921 Stücke: Lieferzeit 14-28 Tag (e) |
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VS-8EWH02FNTR-M3 | Hersteller : Vishay |
Diode Switching 200V 8A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| VS-8EWH02FNTR-M3 | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 8A; 33ns; DPAK; Ufmax: 0.85V; Ifsm: 140A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 8A Max. load current: 16A Reverse recovery time: 33ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 22pF Case: DPAK Max. forward voltage: 0.85V Max. forward impulse current: 140A Leakage current: 60µA Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| VS-8EWH02FNTR-M3 | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 8A; 33ns; DPAK; Ufmax: 0.85V; Ifsm: 140A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 8A Max. load current: 16A Reverse recovery time: 33ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 22pF Case: DPAK Max. forward voltage: 0.85V Max. forward impulse current: 140A Leakage current: 60µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |